Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2025
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·DARLINGTON
·Complement to type 2SB1344
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 100 V
CBO
V
Collector -emitter voltage Open base 100 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 8 A
ICM Collector current-peak 10 A
PC Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
30
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2025
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=2A ; VCE=3V 1000 20000
fT Transition frequency IC=0.2A ; VCE=5V 40 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF
Collector-emitter breakdown voltage IC=5mA; IB=0 100 V
Collector-base breakdown voltage IC=50μA; IE=0 100 V
Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V
Collector cut-off current VCB=100V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 3.0 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2025
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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