Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2023
DESCRIPTION ·
·With
·Complement to type 2SB1033
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplifiers
·Power drivers
·DC-DC converters
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 1 A
PC Collector dissipation TC=25℃ 40 W
Base
Collector;connected to
mounting base
℃)
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -50~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2023
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 60 320
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF
fT Transition frequency IC=0.5A ; VCE=5V 8 MHz
Collector-emitter breakdown voltage IC=10mA; IB=0 60 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V
Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V
Collector cut-off current VCB=60V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
=50μA; IE=0
C
I
=50μA; IC=0
E
80 V
6 V
μA
μA
h
Classifications
FE
D E F
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2023
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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