Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2012
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage
·Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
·Audio frequency power amplifier and
general purpose switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 0.5 A
PC Collector dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
TC=25℃
2.0
W
25
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2012
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V
Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V
Base-emitter on voltage IC=0.5A;VCE=5V 1.0 V
Collector cut-off current VCB=60V; IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
μA
μA
DC current gain IC=0.5A ; VCE=5V 100 320
DC current gain IC=2A ; VCE=5V 20
fT Transition frequency IC=1A ; VCE=5V 3 MHz
COB Collector output capacitance f=1MHz;VCB=10V 35 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2012
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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