Datasheet 2SD1993 Datasheet (Panasonic)

Transistor

2SD1993

Silicon NPN epitaxial planer type

For low-frequency and low-noise amplification

Features

■

●

Low noise voltage NV.

●

High foward current transfer ratio hFE.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

55
55

7
200
100
400
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

6.9±0.1

0.7 4.0

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

123

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05

1.0

0.85

–0.05

+0.1

0.45

1:Emitter
2:Collector
3:Base
MT1 Type Package

0.65
max.

2.5±0.1

2.5±0.1

Unit: mm

(1.45)

0.8

0.8

3.5±0.114.5±0.5

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

NV

Rank R S T

h

FE

210 ~ 340 290 ~ 460 360 ~ 650

Conditions

VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

min

55
55

7

210

typ

200

max

100

1

650

1.0

150

Unit

nA
µA

V
V
V

V

MHz

mV

1

Transistor

2SD1993

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

25˚C

— I

Ta=25˚C

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

IB=400µA

350µA

Collector to emitter voltage VCE (V

hFE — I

C

1000

FE

800

600

Ta=75˚C

400

200

25˚C

–25˚C

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

Ta=25˚C

300µA
250µA

200µA

150µA

100µA

50µA

VCE=5V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10 –30 –100

IC — V

BE

–25˚C

VCE=5V

E

VCB=5V
Ta=25˚C

25˚C

Ta=75˚C

fT — I

Emitter current IE (mA

)

)

)
pF

(

Cob — V

10

8

ob

6

4

2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

NF — I

E

8

7

)

6

dB

(

5

4

3

Noise figure NF

2

1

0
–10 –30 –100 –300 –1000

Emitter current IE (µA

VCE=5V

=1kΩ

R

g

Ta=25˚C

f=100Hz

1kHz

10kHz

)

NV — I

C

120

100

)
mV

(

80

60

40

Noise voltage NV

20

0

0.01 0.03 0.1 0.3 1

VCE=10V
G

=80dB

V

Function=FLAT

Rg=100kΩ

22kΩ

5kΩ

Collector current IC (µA

)