Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1985 2SD1985A
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio hFE
which has satisfactory linearity
·Low collector saturation voltage
·Complement to type 2SB1393 /1393A
APPLICATIONS
·For power amplification
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25℃)
Fig.1 simplified outline (TO-220Fa) and symbol
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SD1985 60
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-peak 5 A
PC Collector power dissipation
Tj
T
stg
Collector-base voltage
2SD1985A
2SD1985 60
Collector-emitter voltage
2SD1985A
Emitter-base voltage Open collector 6 V
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Open emitter
80
Open base
80
TC=25℃ 25
Ta=25℃
2
V
V
W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1985 2SD1985A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
CEO
CEsat
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=3A;IB=0.375A 1.2 V
2SD1985 60
2SD1985A
IC=30mA , IB=0
80
V
VBE Base-emitter voltage VCE=4V;IC=3A 1.8 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=6V; IC=0 1 mA
DC current gain IC=1A ; VCE=4V 70 250
DC current gain IC=3A ; VCE=4V 10
h
h
I
I
I
CES
CEO
EBO
FE-1
FE-2
2SD1985 VCE=60V;IB=0
2SD1985A V
=80V;IB=0
CE
2SD1985 VCE=30V;IB=0
2SD1985A V
=60V;IB=0
CE
200
300
μA
μA
fT Transition frequency IC=0.5A; VCE=5V;f=10MHz 30 MHz
Switching times
ton
ts
tf
Turn-on time 0.5
Storage time 2.5
Fall time
h
Classifications
FE-1
Q P
70-150 120-250
I
=1A ;IB1=0.1A
C
=-0.1A;VCC=50V
I
B2
0.4
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1985 2SD1985A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1985 2SD1985A
4
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