Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1975 2SD1975A
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1317/1317A
·Wide area of safe operation
·High transition frequency f
APPLICATIONS
·For high power amplification
·Optimum for the output stage of a
Hi-Fi audio amplifier
PINNING
PIN DESCRIPTION
T
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SD1975 180
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-peak 25 A
PC Collector power dissipation
Collector-base voltage
2SD1975A
2SD1975 180
Collector-emitter voltage
2SD1975A
Emitter-base voltage Open collector 5 V
Open emitter
Open base
Ta=25℃
TC=25℃
V
200
V
200
3.5
W
150
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1975 2SD1975A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=10A ;IB=1A 2.5 V
CEsat
V
Emitter-base voltage IC=8A ; VCE=5V 1.8 V
BE
I
CBO
Collector
cut-off current
50 μA
2SD1975A VCB=200V; IE=0
2SD1975 VCB=180V; IE=0
I
Emitter cut-off current VEB=3V; IC=0 50 μA
EBO
h
DC current gain IC=20mA ; VCE=5V 20
FE-1
h
DC current gain IC=1A ; VCE=5V 60 200
FE-2
h
DC current gain IC=8A ; VCE=5V 20
FE-3
fT Transition frequency IC=0.5A ; VCE=5V 20 MHz
COB Collector output capacitance f=1MHz;VCB=10V 200 pF
h
classifications
FE-2
Q S P
60-120 80-160 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1975 2SD1975A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1975 2SD1975A
4
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