Page 1
Po wer Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1317 and 2SB1317A
Features
■
●
Satisfactory foward current transfer ratio hFE collector current I
characteristics
●
Wide area of safe operation (ASO)
●
High transition frequency f
●
Optimum for the output stage of a HiFi audio amplifier
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SD1975
2SD1975A
2SD1975
2SD1975A
TC=25°C
Ta=25°C
T
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Ratings
180
200
180
200
5
25
15
150
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
20.0±0.5
C
6.010.0
26.0±0.520.0±0.5
1.5
2.5
1.5
Solder Dip
10.9±0.5
123
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3L Package
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
2SD1975
2SD1975A
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE2
Rank Q S P
h
FE2
60 to 120 80 to 160 100 to 200
C
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
=25˚C)
Conditions
VCB = 180V, IE = 0
VCB = 200V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
IC = 10A, IB = 1A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
60
20
typ
20
200
max
50
50
50
200
1.8
2.5
Unit
µA
µA
V
V
MHz
pF
1
Page 2
Po wer Transistors 2SD1975, 2SD1975A
PC—Ta IC—V
200
)
W
(
C
(1)
150
100
50
Collector power dissipation P
(2)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
10
V
(
3
CE(sat)
1
0.3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3.5W)
(P
C
(3)
V
CE(sat)—IC
TC=100˚C
IC/IB=10
25˚C
–25˚C
CE
24
20
)
A
(
16
C
12
8
IB=1000mA
800mA
700mA
600mA
500mA
400mA
T
C
300mA
200mA
=25˚C
100mA
Collector current I
4
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
C
1000
FE
300
TC=100˚C
25˚C
100
–25˚C
30
)
VCE=5V
24
20
)
A
(
16
C
12
8
Collector current I
4
0
04132
1000
)
300
MHz
(
T
100
30
IC—V
BE
VCE=5V
25˚C
TC=–25˚C
100˚C
Base to emitter voltage VBE (V
fT—I
C
VCE=10V
f=1MHz
T
=25˚C
C
)
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
CB
)
IE=0
f=1MHz
=25˚C
T
C
Collector current IC (A
10000
)
pF
(
3000
ob
1000
300
100
30
Cob—V
Collector output capacitance C
10
1 3 10 30 100
Collector to base voltage VCB (V
10
3
Forward current transfer ratio h
1
0.1 1 10 1000.3 3 30
Collector current IC (A
Area of safe operation (ASO)
100
I
CP
30
)
I
10
C
A
(
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
100ms
)
Non repetitive pulse
=25˚C
T
C
t=10ms
DC
2SD1975
2SD1975A
10
3
Transition frequency f
1
0.01 0.1 1 100.03 0.3 3
)
Collector current IC (A
)
2
Page 3
Po wer Transistors 2SD1975, 2SD1975A
R
—t
th(t)
10000
)
1000
˚C/W
(
(t)
th
100
10
1
Thermal resistance R
0.1
–4
10
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.3A (3W) and without heat sink
(1) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
–3
10
–1
–2
10
Time t (s
1010
110
10
)
(1)
(2)
3
2
4
10
3
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