Datasheet 2SD1959 Specification

isc Product Specification

isc website： www.iscsemi.com isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor 2SD1959

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V

CEO(SUS)

= 650V (Min)

·High Switching Speed

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for use in horizontal deflection circuits of

color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

V

CBO

Collector-Base Voltage

1400VV

CEO

Collector-Emitter Voltage

650

V

V

EBO

Emitter-Base Voltage

6

V

I

C

Collector Current- Continuous

10

A

ICMCollector Current-Peak

20

A

I

B

Base Current- Continuous

5

A

IBMBase Current-Peak

8

A

P

C

Collector Power Dissipation
@ TC=25℃

50

W

T

J

Junction Temperature

150

℃

T

stg

Storage Temperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R

th j-c

Thermal Resistance,Junction to Case

2.8

℃/W

isc Product Specification

isc website： www.iscsemi.com isc & iscsemi is registered trademark

2

isc Silicon NPN Power Transistor 2SD1959

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V

CEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA ; IB= 0

650

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

6

V

V

CE

(sat)

Collector-Emitter Saturation Voltage

IC= 6A; IB= 1.2A

5.0

V

V

BE

(sat)

Base-Emitter Saturation Voltage

IC= 6A; IB= 1.2A

1.1

V

I

CES

Collector Cutoff Current

VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125℃

1.0

2.0

mA

I

EBO

Emitter Cutoff Current

VEB= 6V ; IC= 0

0.1

mA

h

FE-1

DC Current Gain

IC= 1A ; VCE= 5V

10

30

h

FE-2

DC Current Gain

IC= 6A ; VCE= 5V

5

9.5

COBOutput Capacitance

IE= 0; VCB= 10V; f

test

= 1MHz

200

pF

t

f

Fall Time

IC= 6A; IB1= IB2= 1.2A;

1.0

μs