Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1940
DESCRIPTION
·With TO-220F package
·Wide area of safe operation
APPLICATIONS
·85V/6A, AF 25 to 30W output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 10 A
PC Collector dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 85 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
25 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1940
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=5mA ;RBE=∞
C
85 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-base breakdown voltage IC=5mA ;IE=0 100 V
Emitter-base breakdown voltage IE=5mA ;IC=0 6 V
Collector-emitter saturation voltage IC=4A ;IB=0.4A 2.0 V
Base-emitter on voltage IC=1A;VCE=5V 1.5 V
Collector cut-off current VCB=40V; IE=0 0.1 mA
Emitter cut-off current VEB=4V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 60 320
DC current gain IC=3A ; VCE=5V 20
fT Transition frequency IC=1A ; VCE=5V 15 MHz
COB Collector output capacitance f=1MHz;VCB=10V 110 pF
Switching times
ton Turn-on time 0.28
=0.5A; IB1=-IB2=50mA
I
ts Storage time 3.60
tf Fall time
C
=20V ,RL=40Ω
V
CC
0.50
h
Classifications
FE-1
D E F
60-120 100-200 160-320
2
μs
μs
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1940
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1940
4
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