Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1933
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1342
·High DC current gain
APPLICATIONS
·Low frequency power amplification
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 80 V
CBO
V
Collector -emitter voltage Open base 80 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 4 A
ICM Collector current-peak 6 A
PC Collector power dissipation
℃)
TC=25℃
Ta=25℃
30
W
2
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1933
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
hFE DC current gain IC=2A ; VCE=3V 1000 10000
fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF
Collector-base breakdown voltage IC=50μA; IE=0 80 V
Collector-emitter breakdown voltage IC=1mA;IB=0 80 V
Collector-emitter saturation voltage IC=2A ;IB=4mA 1.5 V
Collector cut-off current VCB=80V; IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 3.0 mA
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1933
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Loading...