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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1932
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain: hFE= 1000(Min)@ (VCE= 3V, IC= 2A)
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 80V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 4 A
Collector Current-Peak 6 A
Collector Power Dissipation
@T
=25℃
a
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
2
W
35
T
stg
Storage Temperature -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1932
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
(BR)CEO
(BR)CBO
CE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 80 V
Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V
Collector Cutoff Current VCB= 80V; IE= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 3 mA
DC Current Gain IC= 2A; VCE= 3V 1000 10000
Output Capacitance
Current-Gain—Bandwidth Product
I
= 0; VCB= 10V; f
E
I
= -0.2A; VCE= 5V; f
E
= 1MHz
test
test
= 10MHz
35 pF
40 MHz
isc Website：www.iscsemi.cn
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