Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1928
DESCRIPTION
·Collector-Emitter Saturation Voltage : V
CE(sat)
·High DC Current Gain
: h
= 2000(Min) @ IC= 4A
FE
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(T
= 1.5V(Max) @IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
I
B
C
T
J
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 8 A
Collector Current-Pulse 12 A
B Base Current-Continuous 0.8 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ T
=25℃
C
Junction Temperature 150 ℃
2
W
25
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1928
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
V
BE(
I
CBO
I
EBO
h
FE -1
h
FE -2
Switching times
t
on
t
stg
t
f
Collector-Emitter Saturation Voltage IC= 4A; IB= 4mA B 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 4A; IB= 4mA B 2.0 V
)
sat
Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA
Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA
DC Current Gain IC= 4A; VCE= 2V 2000 20000
DC Current Gain IC= 6A; VCE= 2V 500
Turn-on Time 0.4 μs
Storage Time 2.5 μs
Fall Time
IC= 4A, IB1= -IB2= 4mA
0.5 μs
isc Website：www.iscsemi.cn
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