Page 1
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Applications
•
General power amplifier.
Package Dimensions
unit : mm
2041A
Features
• Wide ASO (Adoption of MBIT process).
•
Low saturation voltage.
• High reliability.
• High breakdown voltage.
• Micaless package facilitating mounting.
Specifications
( ):2SB1274
3.2
18.1
2.55
5.6
2.55
[2SB1274/2SD1913]
10.0
3.5
1.6
1.2
0.75
1
23
2.55
2.55
4.5
2.8
7.2
16.0
2.4
0.7
14.0
1 : Base
2 : Collector
2.4
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C20W
(−)60 V
(−)60 V
(−)6 V
(−)3 A
(−)8 A
2W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)40V, IE=0 (--)100 µA
VEB=(--)4V, IC=0 (--)100 µA
Continued on next page.
D2000 TS IM 8-2055
Unit
No.2246-1/4
Page 2
2SB1274/2SD1913
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (60)40 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)0.2A (--)0.4 (--)1 V
Base-to-Emitter Voltage V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
* : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows :
Rank QR S
hFE70 to 140 100 to 200 140 to 280
hFE1VCE=(--)5V, IC=(--)0.5A 70* 280*
hFE2VCE=(--)5V, IC=(--)3A 20
VCE=(--)5V, IC=(--)0.5A 100 MHz
T
BE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCE=(--)5V, IC=(--)0.5A (--)0.8 (--)1 V
=(--)1mA, IE=0 (--)60 V
=5mA, RBE=∞ (--)60 V
=(--)1mA, IC=0 (--)6 V
min typ max
Ratings
Unit
--3.0
2SB1274
--2.5
-- A
--2.0
C
--1.5
--1.0
--40mA
--45mA
--50mA
IC -- V
--35mA
CE
--30mA
--25mA
--20mA
--15mA
--10mA
--5mA
Collector Current, I
--0.5
=0
I
0
0--2--1 -- 4--3 --5 --6
B
Collector-to-Emitter Voltage, VCE -- V
--3.6
2SB1274
VCE= --5V
--3.2
--2.8
-- A
--2.4
C
--2.0
--1.6
--1.2
Collector Current, I
--0.8
--0.4
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
IC -- V
Ta=120°C
BE
25°C
--40°C
Base-to-Emitter V oltage, VBE -- V
IT02816
IT02818
3.0
30mA
45mA
2.5
35mA
40mA
50mA
-- A
2.0
C
IC -- V
25mA
CE
20mA
2SD1913
15mA
10mA
1.5
BE
25°C
--40°C
5mA
I
B
=0
IT02817
2SD1913
VCE=5V
IT02819
1.0
0.5
0
0214356
Collector-to-Emitter Voltage, VCE -- V
3.6
3.2
2.8
-- A Collector Current, I
2.4
C
2.0
1.6
1.2
Collector Current, I
0.8
0.4
0
0 0.2 0.4 0.80.6 1.0 1.2 1.4
IC -- V
Ta=120°C
Base-to-Emitter V oltage, VBE -- V
No.2246-2/4
Page 3
1000
2SB1274/2SD1913
hFE -- I
7
5
C
2SB1274
VCE= --5V
1000
7
5
hFE -- I
C
2SD1913
VCE=5V
3
FE
2
100
7
DC Current Gain, h
5
3
2
7
23 7523 23755
--0.01 --1.0
3
2
100
-- MHz
T
7
5
3
2
10
Gain-Bandwidth Product, f
7
5
2
--1.0
7
-- V
5
3
(sat)
CE
2
--0.1
7
5
3
2
Collector-to-Emitter
Saturation V oltage, V
--0.01
7
2
--10
-- V
7
5
(sat)
BE
3
2
273752732355
27
--0.01
Ta=120°C
25°C
--40°C
--0.1
Collector Current, I
fT -- I
--0.1--0.01 --1.0
Collector Current, I
VCE(sat) -- I
Ta=
35
723 2357 5
--0.1
Collector Current, I
VBE(sat) -- I
120°C
--40
-- A
C
C
-- A
C
C
°C
25
°C
--1.0
-- A
C
C
IT02820
2SB1274
VCE= --5V
IT02822
2SB1274
10
IC / IB=
IT02824
2SB1274
IC / IB=10
3
FE
2
100
7
DC Current Gain, h
5
3
2
7
23 7523 23755
0.01 1.0
3
2
100
-- MHz
T
7
5
3
2
10
Gain-Bandwidth Product, f
7
5
2
1.0
7
-- V
5
(sat)
3
CE
2
0.1
7
5
3
2
Collector-to-Emitter
Saturation V oltage, V
0.01
7
2
10
-- V
7
5
(sat)
BE
3
2
2355235235
27
0.01
Ta=120°C
25°C
--40°C
0.1
Collector Current, I
fT -- I
0.10.01 1.0
Collector Current, I
VCE(sat) -- I
Ta=
35
723 2357 5
0.1
Collector Current, I
VBE(sat) -- I
120°C
C
--40
25
°C
C
C
C
-- A
-- A
C
°C
-- A
C
2SD1913
VCE=5V
2SD1913
IC / IB=
1.0
2SD1913
IC / IB=10
IT02821
IT02823
10
IT02825
--1.0
7
Base-to-Emitter
Saturation V oltage, V
5
3
7
--0.01
°C
°C
25
C
--1.0--0.1
-- A
IT02826
120°C
Ta=
--40
57
23 5723 23 5
Collector Current, I
1.0
7
Base-to-Emitter
Saturation V oltage, V
5
3
7
0.01
°C
°C
25
1.00.1
C
-- A
IT02827
--40°C
Ta=
120
57
23 5723 23 5
Collector Current, I
No.2246-3/4
Page 4
2SB1274/2SD1913
100ms
A S O
10ms
DC operation
500µs
1ms
100µs
2SB1274
2
ICP=8A
10
7
5
-- A
IC=3A
C
3
2
2
ICP= --8A
--10
7
5
-- A
IC= --3A
C
3
2
100ms
A S O
DC operation
10ms
2SD1913
100µs
500µs
1ms
--1.0
7
5
Collector Current, I
3
2
--0.1
23 57 23 57
Collector-to-Emitter Voltage, V
2.5
2.0
-- W
--10 --100
P
-- Ta
C
CE
-- V
2SB1274 / 2SD1913
C
1.5
1.0
0.5
Collector Dissipation, P
0
0 20 40 60 80 100 120 140 160
No heat sink
Ambient Temperature, Ta -- °C Case Temperature, Tc
IT02828
IT02831
1.0
7
5
Collector Current, I
3
2
0.1
23 57 23 57
Collector-to-Emitter Voltage, V
25
20
10 100
CE
P
-- Tc
C
2SB1274 / 2SD1913
-- W
C
15
10
5
Collector Dissipation, P
0
0 20 40 60 80 100 120 140 160
-- °C
-- V
IT02829
IT02830
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject
to change without notice.
PS
No.2246-4/4
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