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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1912
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Wide Area of Safe Operation
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
(BR)CEO
= 60V(Min)
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 3 A
Collector Current-Peak 8 A
Collector Power Dissipation
@T
=25℃
a
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
1.75
W
30
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1912
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
(on)
OB
Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 60 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 60 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V
Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V
Collector Cutoff Current VCB= 40V; IE= 0 100 μA
Emitter Cutoff Current VEB= 4V; IC= 0 100 μA
DC Current Gain IC= 0.5A; VCE= 5V 70 280
DC Current Gain IC= 3A; VCE= 5V 20
Output Capacitance IE= 0; VCB= 10V, f= 1MHz 40 pF
h
f
T
FE-1
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 100 MHz
Classifications
Q R S
70-140 100-200 140-280
isc Website：www.iscsemi.cn
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