Page 1
Power Transistor (80V, 1A)
2SD1898 / 2SD1733
Features Dimensions (Unit : mm)
1) High V
2) High I
3) Good h
4) Low V
5) Complements the 2SB1260 / 2SB1181
Structure
Epitaxial planer type
NPN silicon transistor
Absolute maximum ratings (Ta=25C)
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Collector power
dissipation
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw=20ms, duty=1 / 2
∗2 When mounted on a 40×40×0.7mm ceramic board.
CEO, VCEO=80V
C, IC=1A (DC)
FE linearity
CE (sat)
Parameter Symbol
CBO
CEO
EBO
C
I
2SD1898
P
2SD1733
2SD1898
+0.2
4.0±0.3
ROHM : MPT3
EIAJ : SC-62
2SD1733
0.3
±
1.5
0.1
0.3
−
+
5.5
0.75
Limits
Unit
120 V
80 V
5V
1 A (DC)
2 A (Pulse)
0.5
2
C
10
1
W (Tc=25°C)
∗1
W
W
∗2
W
+0.2
4.5
−0.1
1.6±0.1
0.5±0.1
−0.1
2.5
1.0±0.2
ROHM : CPT3
EIAJ : SC-63
(3)(2)(1)
0.5±0.1
0.4±0.1
1.5±0.1
6.5±0.2
5.1
0.9
(1)
+
−
(2)
0.4±0.1
1.5±0.1
3.0±0.2
Abbreviated symbol : DF
C0.5
0.2
0.1
0.9
0.65
±
0.1
2.3±0.22.3±0.2
(3)
±0.1
1.5
+0.1
0.4
−0.05
(1) Base
(2) Collector
(3) Emitter
+
0.2
2.3
−
0.1
0.5
±
0.1
0.5
±
1.5
9.5
2.5
0.55
±
0.1
±
0.2
1.0
(1) Base
(2) Collector
(3) Emitter
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.E
Page 2
2SD1898 / 2SD1733
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
CBO 120 V
CEO 80 V
EBO 5V
C
I
2SD1898
Collector power
dissipation
C
P
2SD1733
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw=20ms, duty=1 / 2
∗2 When mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
∗
Packaging specifications and h
Package Taping
Code
Basic ordering unit (pieces)
Type
2SD1898
2SD1733
FE
QR
QR
FE
FE values are classified as follows :
h
Item
h
FE
Q
120 to 270
R
180 to 390
Limits
1 A (DC)
2 A (Pulse)
0.5
2
1
10
Min.
Typ. Max. Unit Conditions
120
80
5
−
−
120
−
0.15
−
100
−
T100
1000h
−
−
−
−
−
−
20
W (Tc=25°C)
−
−
−
1
0.5
390
0.4
−
−
TL
2500
−
−
Unit
W
W
W
MHz
∗1
∗2
C
VI
C
I
V
E
I
V
V
μA
V
μA
V
−
I
C/IB
V
V
V
pF
=50μA
=1mA
=50μA
CB
=100V
EB
=4V
CE
=3V, IC=0.5A
=500mA/50mA
CE
=10V, IE=−50mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
Data Sheet
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.E
Page 3
0
0
2SD1898 / 2SD1733
Electrical characteristic curves
1000
(mA)
100
C
10
1
COLLECTOR CURRENT : I
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
V)
(
CE(sat)
2.0
1.0
0.5
0.2
IC/IB=20/1
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
10/1
COLLECTOR CURRENT : IC (
Fig.4 Collector-emitter saturation
voltage vs. collector current
10
5
Ic Max (Pulse)
2
A)
(
DC
C
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
2m
1m
0.1 0.2 0.5 1 2 5 10 20 50 100 500200 100
COLLECTOR TO EMITTER VOLTAGE : VCE (
Pw=10m
Pw=100mS
Ta=25°C
CE
=5V
V
BE
(V)
Ta=25°C
1000 10 1000
mA)
Ta=25°C
Single
non-repetitive
pulse
S
Data Sheet
E
(mA)
Ta=25°C
6mA
5mA
2mA
IB=0mA
Ta=25°C
CE
=5V
V
4mA
1mA
3mA
FE
1000
100
DC CURRENT GAIN : h
0
V)
1000
pF)
pF)
100
10
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
COLLECTOR CURRENT : IC (
Fig.3 DC current gain vs.
collector current
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (
EMITTER TO BASE VOLTAGE : VEB (
Fig.6 Collector output capacitance vs.
collector-base voltage
A)
(
C
COLLECTOR CURRENT : I
500
(MHz)
200
T
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1 2 5 10 20 50 100 200 500 100
1.0
0.8
0.6
0.4
0.2
0
2408106
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.2 Grounded emitter output
characteristics
EMITTER CURRENT : −I
Fig.5 Gain bandwidth product vs.
emitter current
Emitter input capacitance vs.
emitter-base voltage
V)
Ta=25°C
VCE=3V
1V
1000 10 1000
mA)
Ta=25°C
f=1MHz
E
=0A
I
Ic=0A
V)
V)
Fig.7 Safe operating area
(2SD1898)
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.E
Page 4
Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specied in this document are intended to be used with general-use electronic
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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Notice
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