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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1897
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·High power dissipation:P
APPLICATIONS
·For low frequency power amplifier,power
driver and DC-DC converter applications
PINNING
PIN DESCRIPTION
=30W@TC=25℃
C
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-Peak 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
TC=25℃
=25℃
T
a
30
W
2
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1897
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=1mA , IB=0 100 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
=50μA , IE=0
C
I
=50μA , IC=0
E
100 V
5 V
Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V
Collector cut-off current VCB=100V IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
hFE DC current gai n IC=1A ; VCE=5V 60 320
fT Transition frequency IE=-0.5A ; VCE=5V;f=5MHz 8 MHz
Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 100 pF
hFE Classifications
D E F
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1897
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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