Page 1
2SD1868, 2SD1869
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SD1868, 2SD1869
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1868 2SA1869 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base
2SD1868 V
(BR)CBO
breakdown voltage
2SD1869 200
Collector to emitter
2SD1868 V
(BR)CEO
breakdown voltage
2SD1869 200
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff
2SD1868 I
CBO
current
2SD1869 V
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
h
V
FE1
FE2
BE
CE(sat)
voltage
Gain bandwidth product f
Collector output capacitance C
T
ob
Note: 1. The 2SD1868 and 2SD1869 are grouped by h
Grade B C D
h
FE1
60 to 120 100 to 200 160 to 320
160 — — V IC = 10 µA, IE = 0
160 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
*
60 — 320 VCE = 5 V, IC = 10 mA
30 — — VCE = 5 V, IC = 1 mA
— — 1.5 V VCE = 5 V, IC = 10 mA
——2VI
— 140 — MHz VCE = 5 V, IC = 10 mA
— 3.8 — pF VCB = 10 V, IE = 0, f = 1 MHz
160 200 V
160 200 V
55V
100 100 mA
0.9 0.9 W
= 10 µA, IC = 0
E
= 140 V, IE = 0
CB
= 160 V, IE = 0
CB
= 30 mA, IB = 3 mA
C
as follows.
FE1
2
Page 3
2SD1868, 2SD1869
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
100
VCE = 5 V
50
Pulse Test
(mA)
C
20
10
5
Ta = 75°C
25
–25
Typical Output Characteristics
20
16
(mA)
C
12
120
110
100
90
80
70
8
60
50
40
4
Collector Current I
15010050
0
246810
Collector to Emitter Voltage V
30
20
10 µA
IB = 0
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
500
V
= 5 V
–25
CE
Pulse Test
FE
200
Ta = 75°C
100
50
25
20
Collector Current I
2
1
0 0.40.2 0.6 1.00.8
Base to Emitter Voltage V
BE
(V)
10
DC Current Transfer Ratio h
5
2105 20 50 1001
Collector Current I
(mA)
C
3
Page 4
2SD1868, 2SD1869
Saturation Voltage vs. Collector Current
(V)
CE(sat)
Collector to Emitter Saturation Voltage V
5
(V)
BE(sat)
Base to Emitter Saturation Voltage V
IC = 10 I
B
Pulse Test
2
1.0
V
0.5
0.2
0.1
BE(sat)
V
CE(sat)
Ta = –25°C
75
25
Ta = –25°C
75
25
0.05
1 2 10 50 100520
Collector Current I
C
(mA)
50
f = 1 MHz
(pF)
I
ob
20
10
500
200
(MHz)
T
100
50
20
10
Gain Bandwidth Product f
5
Collector Output Capacitance vs.
Collector to Base Voltage
= 0
E
Gain Bandwidth Product vs.
Collector Current
VCE = 5 V
Pulse Test
Collector Current I
10 505201.0 20.5
C
(mA)
5
2
1.0
Collector Output Capacitance C
0.5
5 20 10010 5021
Collector to Base Voltage V
CB
(V)
4
Page 5
Unit: mm
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
0.7
8.0 ± 0.5
2.3 Max
10.1 Min
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 Mod
—
Conforms
0.35 g
Page 6
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