Datasheet 2SD1867, 2SD1980, 2SD2195 Datasheet (ROHM) [ru]

2SD2195 / 2SD1980 / 2SD1867

Transistors

Power Transistor (100V, 2A)

2SD2195 / 2SD1980 / 2SD1867

zFeatures

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4) Complements the 2SB1580 / 2SB1316.

zEquivalent circuit

C

B

R1R

2

E

1

2

3.5kΩ
300Ω

: Base

B

: Collector

C

: Emitter

E

R
R

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector
power
dissipation

Junction temperature
Storage temperature

∗

1 Single pulse Pw=100ms

∗

2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

∗

3

Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.

2SD2195

2SD1980
2SD1867

Symbol

VCBO
VCEO
VEBO

IC

PC

Tj

Tstg

Limits

100
100

6
2

∗1

3 A(Pulse)

0.5

∗2

2
1

10

∗3

1

150

−55 to +150

W(Tc=25°C)

Unit

V
V
V

A(DC)

W

W

°C
°C

zExternal dimensions (Unit : mm)

2SD2195

ROHM : MPT3
EIAJ : SC-62

2SD1980

ROHM : CPT3
EIAJ : SC-63

2SD1867

0.65Max.

ROHM : ATV

0.75

4.5

1.6

(1)

(3)(2)

0.5

1.51.5

3.0

6.5

5.1

0.9

(2)

2.54

0.65

2.3

2.3

(3)

(2)

6.8

0.5

(3)

2.54

0.9

(1)

(1)

1.5

0.5

2.5

4.0

1.0

0.40.4

1.5

5.5

4.4

0.9

1.0

14.5

Taping specifications

2.3

0.5

1.5

2.5

0.8Min.

0.5

1.0

0.4

(1) Base
(2) Collector
(3) Emitter

9.5

(1) Base
(2) Collector
(3) Emitter

2.5

0.451.05

(1) Emitter
(2) Collector

(3) Base

Rev.B 1/3

Transistors

)

n

nt

nt

e

)

e

)

2SD2195 / 2SD1980 / 2SD1867

FE

zPackaging specifications and h

Type

Package

FE

h
Marking
Code
Basic ordering unit (pieces)

Denotes h

FE

∗

2SD2195 2SD1980 2SD1867

MPT3 CPT3 ATV

1k to 10k 1k to 10k 1k to 10k

DP
T100
1000 2500 2500

−−

TL TV2

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag

Base-Emitter saturation voltage

DC current

transfer ratio

Transition frequency

Output capacitance

∗

Measured using pulse current.

BV
BV
BV

V
V

I

CBO

I

EBO
CE(sat)
BE(sat)

h

f

Cob

CBO
CBO
EBO

FE

T

100

−

100

−

6

−−

−

−

−

−

−−

−−

1000

−

80

−

25

−

−

−

10

3

1.5 V

2.0 V

10000

−

−

V
V
V

µA

mA

− V

MHz

pF

I

C

=

50µA

I

C

=

5mA

E

=

5mA

I

CB

=

100V

V

EB

=

5V

V

C

= 1A ,

I

C/IB

=

1A/1mA

I

CE

= 2V ,

CE

= 5V ,

V

CB

=

10V , IE = 0A , f =

V

IB =

IC =
IE =

1mA

1A

−0.1A , f

=

30MHz

1MHz

∗

∗

zElectrical characteristic curves

2.0

Ta=25°C

(A)

1.6

C

1.2

0.8

0.4

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

1mA

23410

Fig.1 Grounded emitter output
characteristics

=0.3mA

B

I

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

CE

10

5

A)

(

2

C

1

0.5

0.2

0.1

0.05

COLLECTOR CURRENT : I

0.02

0.01

5

(V

BASE TO EMITTER VOLTAGE : V

C

°

Ta=100

Fig.2 Grounded emitter propagatio
characteristics

V)

10000

Ta=25°C

5000

FE

2000
1000

500

200
100

50

DC CURRENT GAIN : h

20
10

COLLECTOR CURRENT : I

VCE=4V

2V

0.10.010.001

C

(A)

VCE=2V

C

C

°

25°

−25

2.6 3.01.41.0 1.8 2.20.60.2

BE

(

101

Fig.3 DC current gain vs. collector curre

10000

5000

FE

2000
1000

500

200
100

50

DC CURRENT GAIN : h

20

10

0.001 0.002 0.005 0.01 0.02 0.05

COLLECTOR CURRENT : I

C

°

Ta=100

0.1 0.2 0.5 1 2 5 10

VCE=2V

25°C

°C

−25

C

(A)

100

(V

50

CE(sat)

20
10

5

2
1

0.5

0.2

0.1

COLLECTOR SATURATION VOLTAGE : V

0.0.1

0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

IC/IB=1000

500

Ta=25

100

(V

°C

50

CE(sat)

20
10

5

2
1

0.5

0.2

0.1

COLLECTOR SATURATION VOLTAGE : V

0.0.1

0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

IC/IB=1000

Ta=−25

°C

25

°C

100

°C

Fig.4 DC current gain vs. collector curre

Fig.5 Collector-emitter saturation voltag
vs.collector current

Fig.6 Collector-emitter saturation voltag
vs.collector current

Rev.B 2/3

Transistors

0

e

0

)

0

7)

1000

500

200
100

50

20
10

5

2

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1

0.1

0.2 0.5 1 2 5 10 20 50 10

Ta=25

f=1MHz
I

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector output capacitanc
vs. collector-base voltage

2SD2195 / 2SD1980 / 2SD1867

°C

E

=0A

10

5

IC

Max

Pulse

2

(A)

C

1

500m
200m

100m

50m
20m

10m

COLLECTOR CURRENT : I

5m

When mounted on a 14 8 0.8mm

2m

glass epoxy board.

1m

COLLECTOR TO EMITTER VOLTTER

Ta=25°C

∗ Single Nonrepetitive Pulse

∗

Pw=100ms

DC

+

120.1 0.2 0.5 5 10 20 50 100200 500100

VOLTAGE :V

Pw=1ms

Pw=10ms

∗

∗

∗

+

CE

(V)

Fig.8 Safe operating area (2SD2195

3

IC

Max

Pulse

2

IC

Max

1

0.5

(A)

C

I

0.2

0.1

0.05

Ta=25°C
∗ Single Nonrepetitive
Pulse

12 51020 5010

DC

Pw=100ms

Pw=10ms

VCE (V)

Fig.9 Safe operating area(2SD186

Rev.B 3/3

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1