Page 1
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
2SD1760 / 2SD1864
Features
!!!!
1) Low V
CE(sat)
V
CE(sat)
.
= 0.5V (Typ.)
External dimensions
!!!!
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
Structure
!!!!
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings
!!!!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse, PW = 100ms
*
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
*
2SD1760
2SD1864
(Ta = 25°C)
Limits
CBO
V
V
CEO
EBO
V
I
C
C
P
Tj 150 °C
Tstg −55~+150 °C
60 V
50 V
5V
3 A (DC)
4.5 A (Pulse)
15 W (Tc =25°C)
1
(Units : mm)
2SD1760 2SD1864
0.65Max.
(1)
6.8±0.2
(2)
2.54
ROHM : ATV
6.5±0.2
+0.2
5.1
−0.1
1.5±0.3
−0.1
+0.3
0.9
5.5
0.75
0.9
2.3±0.22.3±0.2
(2)
(3)
(1)
ROHM : CPT3
EIAJ : SC-63
0.65±0.1
Unit
W
C0.5
+0.2
2.3
−0.1
0.5±0.1
1.5
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
1
*
2
*
9.5±0.5
2.5
2.5
±
0.2
0.2
±
0.9
4.4
1.0
0.5
±
0.5
±
0.1
(3)
2.54
14.5
1.05
0.45
±
0.1
(1) Emitter
(2) Collector
(3) Base
Page 2
Transistors
Electrical characteristics
!!!!
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
*
(Ta = 25°C)
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Typ. Max. Unit Conditions
Min.
C
-
60
-
50
5
-
-
-
1
-
-
1
-
0.5
1
-
82 390
-
90
-
40
-
-
-
-
-
= 50µA
VI
C
= 1mA
I
V
I
V
E
= 50µA
µA
V
CB
= 40V
µA
EB
= 4V
V
V
C/IB
= 2A/0.2A
I
-
V
CE
= 3V, IC = 0.5A
MHz
CE
= 5V, IE = −500mA, f = 30MHz
V
pF
VCB = 10V, IE = 0A, f = 1MHz
2SD1760 / 2SD1864
*
*
*
Packaging specifications and h
!!!!
Package Taping
Code
Basic ordering
25°C
-25°C
h
FE
PQR
PQR
unit (pieces)
VCE =
Type
2SD1760
2SD1864
Electrical characteristic curves
!!!!
10
5
(A)
C
2
Ta = 100°C
1
0.5
0.2
0.1
0.05
COLLECTOR CURRENT : I
0.02
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
FE
hFE values are classified as follows:
TL
2500
3V
BE
(V)
TV2
2500
-
Item
h
-
3.0
Ta = 25°C
45mA
A)
(
2.5
C
50mA
2.0
1.5
1.0
COLLECTOR CURRENT : I
0.5
0
012345
COLLECTOR TO EMITTER VOLTAGE : V
40mA
35mA
30mA
25mA
20mA
Fig.2 Grounded emitter output
characteristics ( Ι )
FE
I
= 0mA
B
15mA
10mA
5mA
P
82~180
3.0
(A)
2.5
C
2.0
1.5
1.0
COLLECTOR CURRENT : I
0.5
V)
CE
(
IB = 5mA
PC = 15W
R
180~390
Ta = 25°C
CE
(V)
Q
120~270
50mA
45mA
40mA
35mA
30mA
25mA
20mA
15mA
10mA
0
0 1020304050
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded-emitter output
characteristics( ΙΙ )
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
collector current( Ι )
Ta = 25°C
VCE = 5V
3V
C
(A)
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
Ta = 100°C
COLLECTOR CURRENT : I
Fig.5 DC current gain vs.
collector curren( ΙΙ )
25°C
-25°C
10
V
CE
= 3V
C
(A)
(V)
5
CE(sat)
2
1
0.5
0.2
IC/IB = 50
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
20
10
0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : I
Ta = 25°C
C
(A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Page 3
Transistors
2SD1760 / 2SD1864
10
(V)
(V)
5
CE (sat)
BE (sat)
2
1
Ta = -25°C
0.5
V
BE (sat)
0.2
0.1
Ta = 100°C
0.05
V
CE (sat)
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
BASE SATURATION VOLTAGE : V
25°C
25°C
100°C
-25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
5
2
(A)
C
1
0.5
0.2
0.1
0.05
COLLECTOR CURRENT : I
0.02
Ta = 25°C
Single pulse
*
0.01
0.1
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : V
DC
P
W
=
100ms*
P
W
=
10ms*
Fig.10 Safe operating area
(2SD1760)
lC/lB = 10
C
(A)
CE
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : −I
Fig.8 Gain bandwidth product vs.
emitter current
(°C/W)
100
th
10
1
0.1
(V)
TRANSIENT THERMAL RESISTANCE : R
1 10 1Sec 10Sec 100Sec100
TIME : T
Fig.11 Transient thermal resistance
(2SD1760)
(ms)
Ta = 25°C
CE
V
E
(mA)
VCE=5v
C
I
= 5V
=0.2A
1000
(pF)
500
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob
Fig.9 Collector output capacitance
vs. collector-base voltage
5
2
(A)
C
1
0.5
0.2
0.1
0.05
Ta=25°C
COLLECTOR CURRENT : I
Single
nonrepetitive
0.02
pulse
0.2 0.5 1
COLLECTOR TO EMITTER VOLTAGE : V
Pw=100mSec
DC
5 10 20 50 100
2
Fig.12 Safe operating area
(2SD1864)
Pw=10m
Sec
Ta = 25
f = 1MHz
I
E
= 0A
CB
CE
°C
(V)
(V)
(°C/W)
th
100
10
1
0.1
1 10 100 1 10Sec 100Sec1000Sec
TRANSIENT THERMAL RESISTANCE : R
TIME : T
(ms)
Fig.13 Transient thermal resistance
(2SD1864)
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