Datasheet 2SD1818, 2SD1857A Datasheet (ROHM)

*

Power Transistor (160V , 1.5A)

2SD1918 / 2SD1857A

Features Dimensions (Unit : mm)

1) High breakdown voltage.(BV

2) Low collector output capacitance.
(Typ. 20pF at VCB=10V)

3) High transition frequency.(f

4) Complements the 2SB1275.

Absolute maximum ratings (Ta = 25C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector
power
dissipation

Junction temperature
Storage temperature

1 Pw=200msec duty=1/2

∗
∗

2

2SD1857A

2SD1918

Printed circuit board 1.7mm thick, collector plating 1cm2 or larger

V
V
V

Tstg

CBO
CEO
EBO

I

C

P

C

Tj

Packaging specifications and h

Type 2SD1918

Package

FE

h

Marking

Code

Basic ordering unit (pieces)

Denotes hFE

CPT3

QR

−−

TL

2500

Electrical characteristics (Ta = 25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current

transfer ratio

Transition frequency

Output capacitance

∗

Measured using pulse current.

2SD1918
2SD1857A

T=80MHZ)

Limits

160
160

5

1.5
3
1

10

150

−55 ∼+150

2SD1857A

ATV

PQ

TV2

2500

BV
BV
BV

V
V

CEO=160V)

Unit

A(DC)

A(Pulse)

W(Tc=25°C)

°C
°C

.

FE

CBO

160

CEO

160

EBO

I

CBO

I

EBO

CE(sat)

BE(sat)

h

Cob

120

FE

f

T

2SD1918

0.75

0.9

)
1

(
)

2.3

2

(
)

3

(

2.3

0.65

0.8Min.

1.5

1.0

0.5

2.5

V
V
V

∗1

W

∗2

W1

−

−

V

−

−

V

−

−

1.5
390
270

V

1

μA

1

μA

V

2

V

−

−

−

MHz

−

pF

5

−

−

−

−

−

−

−

−

−

−

82

−

80

−

20

2SD1857A

C

=

50μA

I
I

C

=

1mA

I

E

=

50μA

V

CB

=

120V

EB

=

4V

V
I

C/IB

=

1A/0.1A

C/IB

=

1A/0.1A

I

V

CE/IC

=

V

CE

=

5V , I

CB

=

10V , I

V

ROHM : CPT3
EIAJ : SC-63

ROHM : ATV

5V/0.1A

E

= −

0.1A , f = 30MHz

E

=

0A , f = 1MHz

0.65Max.

6.8

0.5

(2)

(3)

(1)

2.54

2.54

1.5

5.5

5.1

0.9

C0.5

0.5

9.5

2.5

4.4

0.9

1.0

14.5

1.05

Taping specifications

∗

∗

6.5

2.3

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

0.45

(1) Emitter
(2) Collector
(3) Base

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2010 ROHM Co., Ltd. All rights reserved.

2010.09 - Rev.C

1.0

F

cs

F

cs

10

1000

DC CURRENT GAIN : h

)

1000

)

)

F

e

vs. collector current

V)

F

nt

1000

F

nt

0

)

F)

)

1)

10

Electrical characteristic curves

Ta=25°C

(A)

0.8

C

0.6

0.4

0.2

COLLECTOR CURRENT : I

0

012345

COLLECTOR TO EMITTER VOLTAGE : V

ig.1 Ground emitter output characteristi

500

Ta=

100

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

°C

25°C

−25°C

COLLECTOR CURRENT : I

Fig.4 DC current gain vs. collector current ( ΙΙ

500

(MHz)

T

200
100

50

20
10

5

2

TRANSITION FREQUENCY : f

1

−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : I

ig.7 Gain bandwidth products vs. emitter curre

C

(A)

E

(mA)

10mA

9mA
8mA

7mA

6mA

5mA
4mA

3mA

2mA

=1mA

B

I

CE

V

CE

=

5V

Ta=25°C
V

CE

=

5V

(V)

5

(A)

C

2
1

Ta=

100

0.5

0.2

0.1

0.05

COLLECTOR CURRENT : I

0.02

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ig.2 Ground emitter propagation characteristi

10

(V

5

CE(sat)

2
1

0.5

0.2

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

ig.5 Collector-emitter saturation voltag

1000

(p

ob

500

200
100

50

20
10

5

2
1

0.1 0.2 0.5 1 2 5 10 20 50 10

COLLECTOR OUTPUT CAPACITANCE : C

COLLECTOR TO BASE VOLTAGE : V

Fig.8 Collector output capacitance
vs. collector-base voltage

°C

BASE TO EMITTER VOLTAGE : V

IC/IB=20

COLLECTOR CURRENT : I

Ta=25°C

Ta= −25°C

10

VCE=5V

BE

Ta=25°C

C

(A)

Ta=25°C
f=1MHz

E

=

0A

I

CB

(V)

(V

Data Sheet 2SD1918 / 2SD1857A

500

FE

200
100

50

20
10

5

2
1

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : I

Ta=25°C

V

CE

C

(A)

=

10V

5V

Fig.3 DC current gain vs. collector current ( Ι

(

10

5

CE(sat)

(V)

2

BE(sat)

Ta= −25°C

1

0.5

V

BE(sat)

0.2

0.1

0.05

0.02

V

CE(sat)

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

ig.6 Collector-emitter saturation voltage

Base-emitter saturation voltage

5

Ic

Max

(Pulse∗)

2

(A)

C

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : I

2m

Recommended land

1m

0.1 0.2 0.5 2 5 10 20 50 100 200 500 1000

COLLECTOR TO EMITTER VOLTAGE : VCE (V

25°C

DC

100°C

Pw=100ms∗

−25°C

vs. collector curre

Ta=25°C
∗Single

Pw=10ms∗

nonrepetitive
pulse

C

(A)

Fig.9 Safe operating area (2SD221

IC/IB=10

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2010 ROHM Co., Ltd. All rights reserved.

2010.09 - Rev.C

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R1010

A