Datasheet 2SD1857A, 2SD1918, 2SD2211 Datasheet (ROHM) [ru]

2SD2211 / 2SD1918 / 2SD1857A

Transistors

Power Transistor (160V , 1.5A)

2SD2211 / 2SD1918 / 2SD1857A

zFeatures

1) High breakdown voltage.(BV

CEO

= 160V)

2) Low collector output capacitance.
(Typ. 20pF at V

3) High transition frequency.(f

CB

= 10V)

T

= 80MHZ)

4) Complements the 2SB1275 / 2SB1236A.

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector
power
dissipation

Junction temperature

Storage temperature

1 Pw=200msec duty=1/2

∗
∗

2

Printed circuit board 1.7mm thick, collector plating 1cm2 or larger

3

When mounted on a 40 x 40 x 0.7mm ceramic board.

∗

2SD1857A
2SD2211

2SD1918

V
V
V

Tstg

CBO
CEO
EBO

I

C

P

C

Tj

Limits

160
160

5

1.5
3
1

0.5
2
1

10

150

−55 ∼+150

.

zPackaging specifications and h

Type 2SD2211

Package

Marking

Basic ordering unit (pieces)

Denotes h

FE

*

h

Code

FE

MPT3

QR

DQ*
T100
1000

FE

2SD1918

2SD1857A

CPT3

2500

ATV

QR

−−

TL

TV2

2500

zElectrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current

transfer ratio

2SD2211,2SD1918
2SD1857A

Transition frequency
Output capacitance

∗

Measured using pulse current.

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

Cob

PQ

160
160

5

−

−

−

−

120

82

−

−

Unit

V
V
V

A(DC)

A(Pulse)

W
W
W
W

W(Tc=25°C)

°C
°C

−

−

−

−

−

−

−

−

−

80
20

zExternal dimensions (Unit : mm)

2SD2211

0.4

1.5

3.0

1.5

0.4

ROHM : MPT3
EIAJ : SC-62

2SD1918

)
1

(
)

2.3

2

(
)

3

∗1
∗2

∗3

ROHM : CPT3
EIAJ : SC-63

2SD1857A

ROHM : ATV

−

V

−

V

−

V

1

µA

1

µA

V

2

1.5

V

−

390

−

270

−

MHz

−

pF

(

2.3

0.8Min.

1.0

0.5

0.65Max.

(2)

(1)

2.54

C

=

50µA

I
I

C

=

1mA

I

E

=

50µA

V

CB

=

120V

EB

=

4V

V

C/IB

=

1A/0.1A

I
I

C/IB

=

1A/0.1A

V

CE/IC

=

5V/0.1A

V

CE

=

5V , I

E

= −

0.1A , f = 30MHz

CB

=

10V , I

E

=

V

0A , f = 1MHz

1.0

(1)

(2)

0.5

(3)

0.4

0.75

0.9

0.65

2.5

6.8

(3)

2.54

4.0

2.5

0.5

1.5

5.5

0.9

1.5

0.5

9.5

4.4

0.9

1.0

14.5

0.5

1.05

Taping specifications

1.6

4.5

1.5

5.1

C0.5

2.5

6.5

2.3

0.45

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

(1) Emitter
(2) Collector
(3) Base

∗

∗

Rev.A 1/3

2SD2211 / 2SD1918 / 2SD1857A

F

s

F

s

)

)

F

nt

)

F

e

F

nt

0

)

)

)

1)

Transistors

zElectrical characteristic curves

1.0
Ta=25°C

(A)

0.8

C

0.6

0.4

0.2

COLLECTOR CURRENT : I

0

012345

COLLECTOR TO EMITTER VOLTAGE : V

10mA

9mA
8mA

7mA

6mA

5mA
4mA

3mA

2mA

=

B

I

1mA

CE

(V)

ig.1 Ground emitter output characteristic

1000

500

Ta=

100

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

°C

25°C

−25°C

COLLECTOR CURRENT : I

Fig.4 DC current gain vs. collector current ( ΙΙ )

VCE=

5V

C

(A)

1000

500

(MHz)

T

200
100

50

20
10

5

2

TRANSITION FREQUENCY : f

1

−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : I

ig.7 Gain bandwidth products vs. emitter curre

E

(mA)

Ta=25°C

VCE=

5V

10

5

(A)

C

2
1

Ta=

100

0.5

0.2

0.1

0.05

COLLECTOR CURRENT : I

0.02

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

°C

Ta= −25°C

BASE TO EMITTER VOLTAGE : V

Ta=25°C

VCE=5V

BE

(V)

ig.2 Ground emitter propagation characteristic

IC/IB=20

Ta=25°C

10

C

(A)

Ta=25°C
f=1MHz

E

=

0A

I

CB

(V

10

(V

5

CE(sat)

2
1

0.5

0.2

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : I

ig.5 Collector-emitter saturation voltag

vs. collector current

1000

(pF

ob

500

200
100

50

20
10

5

2
1

0.1 0.2 0.5 1 2 5 10 20 50 10

COLLECTOR OUTPUT CAPACITANCE : C

COLLECTOR TO BASE VOLTAGE : V

Fig.8 Collector output capacitance
vs. collector-base voltage

1000

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : I

Ta=25°C

VCE=

C

(A)

10V

5V

Fig.3 DC current gain vs. collector current ( Ι

(V

10

5

(V)

2

Ta= −25°C

1

0.5
V

BE(sat)

0.2

0.1

0.05

0.02

V

CE(sat)

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

BASE SATURATION VOLTAGE : VBE(sat)

COLLECTOR SATURATION VOLTAGE : VCE(sat)

COLLECTOR CURRENT : I

25°C

100°C

−25°C

ig.6 Collector-emitter saturation voltage

Base-emitter saturation voltage

10

5

Ic

Max

(Pulse∗)

2

(A)

C

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : I

2m

Recommended land

1m

0.1 0.2 0.5 2 5 10 20 50 100 200 500 1000

COLLECTOR TO EMITTER VOLTAGE : V

Pw=10ms

Pw=100ms

DC

IC/IB=

C

(A)

vs. collector curre

Ta=25°C
∗Single

nonrepetitive
pulse

∗

∗

10

CE

(V

Fig.9 Safe operating area (2SD221

Rev.A 2/3

2SD2211 / 2SD1918 / 2SD1857A

8)

Transistors

10

5

Ic

Max

(Pulse∗)

2

(A)

C

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : I

2m
1m

0.1 0.2 0.5 21 5 10 20 50 100 200 500 1000

COLLECTOR TO EMITTER VOLTAGE : V

DC

Fig.10 Safe operating area (2SD191

Pw=10ms

Pw=100ms∗

Ta=25°C
∗Single

nonrepetitive
pulse

∗

CE

(V)

Rev.A 3/3

Appendix

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use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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Appendix1-Rev1.1