Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1855
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SB1335
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 80 V
CBO
V
Collector -emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 4 A
PC Collector power dissipation TC=25℃ 30 W
Tj Junction temperature 150 ℃
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1855
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 60 320
fT Transition frequency IC=0.5A; VCE=5V 8 MHz
COB Collector output capacitance f=1MHz ; VCB=10V 90 pF
Collector-emitter breakdown voltage IC=1mA; IB=0 60 V
Collector-base breakdown voltage IC=50μA; IE=0 80 V
Collector-emitter breakdown voltage IE=50μA; IC=0 6 V
Collector-emitter saturation voltage IC=3A ;IB=0.3A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V
Collector cut-off current VCB=80V; IE=0 10 μA
Emitter cut-off current VEB=6V; IC=0 10 μA
hFE Classifications
D E F
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1855
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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