Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1845
DESCRIPTION
·Collector-Base Breakdown Voltage : V
= 1500V (Min.)
CBO
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CES
EBO
I
C
CM
I
B
C
T
J
Collector- Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 2.5 A
Collector Current-Peak 7 A
B Base Current- Continuous 1.5 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ T
=25℃
C
Junction Temperature 150 ℃
3
W
60
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1845
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
h
FE-1
h
FE-2
f
T
V
ECF
Switching times, Resistive Load
Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V
Collector Cutoff Current
DC Current Gain IC= 0.5A; VCE= 5V 5 25
DC Current Gain IC= 2A; VCE= 10V 3.5
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 2 MHz
C-E Diode Forward Voltage IF= 2.5A 2.0 V
VCB= 750V; IE= 0
= 1500V; IE= 0
V
CB
10
1.0
μA
mA
t
stg
t
f
Storage Time 1.5 μs
Fall Time
= 2A; IB1= 0.6A; IB2= -1.2A;
I
C
V
= 200V
CC
0.2 μs
isc Website：www.iscsemi.cn
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