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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1832
DESCRIPTION
·High Collector Current:: IC= 5A
·Low Collector Saturation Voltage
: V
CE(sat)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1.0V(Max.)@IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
T
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
30 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1832
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 60 V
Collector-Base Breakdown Voltage IC= 50μA; IE= 0 60 V
Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V
Collector Cutoff Current VCB= 60V; IE= 0 10 μA
Emitter Cutoff Current VEB= 4V; IC= 0 10 μA
DC Current Gain IC= 1A; VCE= 5V 60 320
Output Capacitance IE= 0; VCB= 10V; f= 1MHz 130 pF
Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V 8 MHz
hFE Classifications
D E F
60-120 100-200 160-320
isc Website：www.iscsemi.cn
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