Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1770
DESCRIPTION
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V
·Complement to Type 2SB1190
APPLICATIONS
·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 150V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
T
Collector-Base Voltage 200 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 1 A
Collector Current-Peak 2 A
Total Power Dissipation
=25℃
@ T
C
C
Total Power Dissipation
@ T
=25℃
a
Junction Temperature 150 ℃
J
25
W
1.4
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1770
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
f
T
OB
(on)
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 150 V
Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V
Base-Emitter On Voltage IC= 0.3A; VCE= 10V 1.0 V
Collector Cutoff Current VCB= 200V; IE= 0 50 μA
Emitter Cutoff Current VEB= 4V; IC= 0 50 μA
DC Current Gain IC= 0.1A; VCE= 10V 60 240
DC Current Gain IC= 0.3A; VCE= 10V 50
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 20 MHz
Output Capacitance
I
= 0; VCB= 10V; f
E
=1MHz
test
27 pF
h
Classifications
FE-1
Q P
60-140 100-240
isc Website：www.iscsemi.cn
2
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