Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1763
DESCRIPTION ·
·With TO-220Fa package
·High breakdown voltage V
·Complement to type 2SB1186
·High transition frequency
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
CEO
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 2 A
ICM Collector current-Peak 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
20 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1763
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.1A ; VCE=5V 100 320
fT Transition frequency IE=-0.1A ; VCE=5V 80 MHz
Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 20 pF
h
FE
Collector-emitter breakdown voltage IC=1mA , IB=0 120 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.4 V
Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V
Collector cut-off current VCB=100V IE=0 1
Emitter cut-off current VEB=4V; IC=0 1
=50μA , IE=0
C
I
=50μA , IC=0
E
120 V
5 V
Classifications
μA
μA
E F
100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1763
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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