Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1762
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·Complement to type 2SB1185
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-Peak 4.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
25 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1762
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.5A ; VCE=3V 60 320
fT Transition frequency IE=-0.5A ; VCE=5V;f=30MHz 90 MHz
Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 40 pF
h
FE
Collector-emitter breakdown voltage IC=1mA , IB=0 50 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V
Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V
Collector cut-off current VCB=40V IE=0 1
Emitter cut-off current VEB=4V; IC=0 1
=50μA , IE=0
C
I
=50μA , IC=0
E
60 V
5 V
Classifications
μA
μA
D E F
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1762
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Loading...