Page 1
Po wer Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
Features
■
●
High forward current transfer ratio hFE which has satisfactory
linearity
●
High emitter to base voltage V
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
EBO
=25˚C)
C
Ratings
100
60
15
12
6
3
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
3.5±0.2
1:Base
2:Collector
3:Emitter
I Type Package
3.5±0.2
1.0 max.
2.5
0.5 max.
1:Base
2:Collector
3:Emitter
I Type Package (Y)
Unit: mm
0.85±0.1
0.4±0.1
Unit: mm
0 to 0.15
0.9±0.1
0 to 0.15
1.01.0
2.5±0.2
2.5±0.2
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
hFE Rank classification
Rank Q P
h
300 to 1200 800 to 2000
FE
Symbol
I
CBO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 100V, IE = 0
VEB = 15V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCE = 12V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
min
60
300
0.3
typ
50
1.5
0.6
max
100
100
2000
0.5
Unit
µA
µA
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD1755
PC—Ta IC—V
20
(1)
(2)
V
BE(sat)—IC
TC=–25˚C
100˚C
(1) TC=Ta
(2) Without heat sink
=1.3W)
(P
C
IC/IB=50
25˚C
)
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
10
)
V
(
3
BE(sat)
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.1 1 100.3 3
Collector current IC (A
CE
6
5
)
A
(
4
C
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
100000
30000
FE
10000
3000
1000
300
100
Forward current transfer ratio h
30
10
0.01 0.1 1 100.03 0.3 3
TC=100˚C
25˚C
–25˚C
Collector current IC (A
=25˚C
T
C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
C
VCE=4V
)
)
10
V
(
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
1
0.1 1 100.3 3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=12V
f=10MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=50
–25˚C
)
=25˚C
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
082647153
Collector current IC (A
, tf — I
stg
t
stg
t
f
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=50(IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
Area of safe operation (ASO)
100
30
I
CP
)
10
A
I
(
C
C
3
300ms
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
10ms
Non repetitive pulse
=25˚C
T
C
t=1ms
)
Page 3
Po wer Transistors 2SD1755
R
—t
–1
10
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
3
1010
110
Time t (s
)
2
10
4
10
3
10
)
˚C/W
2
(
10
(t)
th
10
1
Thermal resistance R
–1
10
–4
10
–3
–2
10
3
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