Datasheet 2SD1747A, 2SD1747 Datasheet (Panasonic)

Po wer Transistors

2SD1747, 2SD1747A

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1177

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector current I

●

I type package enabling direct soldering of the radiating fin to

C

the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage

2SD1747 2SD1747A 2SD1747

2SD1747A Emitter to base voltage Peak collector current Collector current Collector power dissipation

TC=25°C Ta=25°C

Junction temperature Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

130 150

80

100

7

15

7

15

1.3

150

–55 to +150

FE

Unit

W

˚C ˚C

7.0±0.3

3.0±0.2

0.8±0.21.0±0.2

7.2±0.3

1.1±0.1

2.3±0.2

4.6±0.4 213

7.0±0.3

123

2.3±0.2

4.6±0.4

0.75±0.1

2.0±0.2

3.0±0.2

1.0 max.

0.75±0.1

+0.3

–0.

10.0

V

7.2±0.3

V

10.2±0.3

A A

1.1±0.1

Unit: mm

3.5±0.2

0.85±0.1

0.4±0.1

1:Base 2:Collector 3:Emitter I Type Package

Unit: mm

3.5±0.2 0 to 0.15

1.01.0

2.5

0.5 max.

0.9±0.1

0 to 0.15

1:Base 2:Collector 3:Emitter I Type Package (Y)

2.5±0.2

Electrical Characteristics (T

■

Parameter

Collector cutoff current Emitter cutoff current Collector to emitter voltage

2SD1747 2SD1747A

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 100V, IE = 0 VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz

IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V

min

80

100

45 90

typ

30

0.5

1.5

0.1

max

10 50

260

0.5

1.5

Unit

µA µA

V

V V

MHz

µs µs µs

1

Po wer Transistors 2SD1747, 2SD1747A

PC—Ta IC—V

20

) W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

(1) TC=Ta (2) Without heat sink

(1)

(2)

V

CE(sat)—IC

(P

=1.3W)

C

)

IC/IB=20

TC=100˚C 25˚C

–25˚C

)

CE

10

8

) A

(

C

6

4

Collector current I

2

0

012108264

TC=25˚C

IB=55mA

50mA 45mA

40mA

35mA

30mA

20mA 15mA 10mA

5mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

) V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 301010.3 3

Collector current IC (A

(1) IC/IB=10 (2) I

C/IB

T

=25˚C

C

)

(1) (2)

=20

V

) V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 301010.3 3

)

100

) V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

CE(sat)—IC

Collector current IC (A

V

BE(sat)—IC

TC=–25˚C

100˚C

25˚C

Collector current IC (A

(1) IC/IB=10

=20

(2) I

C/IB

T

=25˚C

C

(2)

(1)

)

IC/IB=20

)

hFE—I

10000

3000

FE

1000

300

TC=100˚C

25˚C

100

Forward current transfer ratio h

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

2

C

VCE=2V

10000

3000

) MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

)

fT — I

C

VCE=10V f=10MHz T

C

Collector current IC (A

=25˚C

10000

) pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

)

Cob—V

0.1 1 10 1000.3 3 30

CB

IE=0 f=1MHz

=25˚C

T

C

Collector to base voltage VCB (V

)

Po wer Transistors 2SD1747, 2SD1747A

ton, t

100

30

) µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01 082647153

Collector current IC (A

3

10

) ˚C/W

2

(

10

(t)

th

10

, tf — I

stg

C

Pulsed tw=1ms Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

V

=50V

CC

=25˚C

T

C

t

stg

t

on

t

f

)

R

th(t)

Area of safe operation (ASO)

100

30

I

CP

)

10

A

(

I

C

3

1

300ms

0.3

0.1

Collector current I

0.03

0.01 1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse T

—t

(1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink

=25˚C

C

t=10ms

1ms

2SD1747

(1)

(2)

2SD1747A

)

1

Thermal resistance R

–1

10

–4

10

–3

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10

3