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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1739
DESCRIPTION ·
·With TO-3PFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 18 A
IB Base current 2.5 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 7 V
℃)
PC Collector power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1739
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=5A ;IB=1.2A 8.0 V
CEsat
V
Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V
BEsat
V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
(BR)EBO
VCB=750V; IE=0 10 μA
I
Collector cut-off current
CBO
=1500V; IE=0
V
CB
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
h
DC current gain IC=1A ; VCE=5V 6 30
FE
1 mA
fT Transition frequency IC=1A ; VCE=10V 2 MHz
Switching times
t
Storage time 1.5 μs
stg
tf Fall time
I
=5A; IB1=1A
C
I
=-2A; VCC=200V
B2
0.2 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1739
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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