Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1729
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3.5 A
ICM Collector current (Pulse) 10 A
IB Base current 1.5 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 7 V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
60 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1729
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
Emitter-base breakdown voltage IE=500mA; IC=0 7 V
Collector-emitter saturation voltage IC=3A; IB=0.8A 8.0 V
Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V
VCB=750V; IE=0 10 μA
I
Collector cut-off current
CBO
=1500V; IE=0
V
CB
h
DC current gain IC=0.5A ; VCE=5V 5 25
FE
1 mA
fT Transition frequency IC=0.5A ; VCE=10V 2 MHz
VF Diode forward voltage IF=-3.5A,IB=0 2.0 V
Switching times
ts Storage time 1.5 μs
I
=3A; IB1=0.8A
C
I
=-1.6A VCC=200V
tf Fall time
B2
0.2 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1729
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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