Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1717
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1162
·Excellent linearity of h
·Wide area of safe operation (ASO)
·High transition frequency f
APPLICATIONS
·For high power amplifier applications
PINNING
PIN DESCRIPTION
FE
T
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
ICM Collector current-peak 20 A
PC Collector power dissipation
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 5 V
℃)
3.5
W
TC=25℃
120
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1717
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V
CEsat
V
Base-emitter voltage IC=8A ; VCE=5V 1.8 V
BE
I
Collector cut-off current VCB=160V; IE=0 50 μA
CBO
I
Emitter cut-off current VEB=3V; IC=0 50 μA
EBO
h
DC current gain IC=20mA ; VCE=5V 20
FE-1
h
DC current gain IC=1A ; VCE=5V 60 200
FE-2
h
DC current gain IC=8A ; VCE=5V 20
FE-3
fT Transition frequency IC=0.5A ; VCE=5V 20 MHz
COB Collector output capacitance f=1MHz;VCB=10V 210 pF
h
classifications
FE-2
Q S P
60-120 80-160 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1717
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
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