Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1714
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Good Linearity of h
·Wide Area of Safe Operation
·Complement to Type 2SB1159
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 140V(Min.)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 140 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
Collector Current-Pulse 12 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150
80
W
3
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1714
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
CE
BE
I
I
h
h
h
C
(sat)
(on)
CBO
EBO
FE-1
FE-2
FE-3
OB
f
T
FE-2
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V
Collector Cutoff Current VCB= 140V; IE= 0 50 μA
Emitter Cutoff Current VEB= 3V; IC= 0 50 μA
DC Current Gain IC= 20mA; VCE= 5V 20
DC Current Gain IC= 1A; VCE= 5V 60 200
DC Current Gain IC= 5A; VCE= 5V 20
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 90 pF
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 20 MHz
Classifications
Q S P
60-120 80-160 100-200
isc Website：www.iscsemi.cn
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