Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1712
DESCRIPTION ·
·With TO-3PFa package
·Complement to type 2SB1157
·High transition frequency f
·Satisfactory linearity of h
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN DESCRIPTION
T
FE
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICP Collector current-peak 8 A
PC Collector power dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
℃)
TC=25℃
Ta=25℃
60
W
3
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1712
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V
CEsat
VBE Base-emitter on voltage IC=3A ; VCE=5V 1.8 V
I
Collector cut-off current VCB=100V; IE=0 50 μA
CBO
I
Emitter cut-off current VEB=3V; IC=0 50 μA
EBO
h
DC current gain IC=20mA ; VCE=5V 20
FE-1
h
DC current gain IC=1A ; VCE=5V 60 200
FE -2
h
DC current gain IC=3A ; VCE=5V 20
FE -3
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF
fT Transition frequency IC=0.5A ; VCE=5V 20 MHz
h
classifications
FE-2
Q S P
60-120 80-60 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1712
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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