Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1709
DESCRIPTION
·High Breakdown Voltage : V
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min)
CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 5 A
Collector Current-Pulse 16 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
100 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1709
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
(sat)
(sat)
t
f
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V
Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V
Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V
Collector Cutoff Current VCB= 800V ; IE= 0 10 μA
Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA
DC Current Gain IC= 0.5A ; VCE= 5V 8
I
= 4A , IB1= 0.8A ; IB2= -1.6A
Fall Time
C
PW=20μs; Duty Cycle≤1%
0.5 μs
isc Website：www.iscsemi.cn
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