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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1707
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Good Linearity of h
·Low Collector Saturation Voltage-
: V
·Complement to Type 2SB1156
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
(BR)CEO
= 0.5V(Max.)@ IC= 8A
CE(sat)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 130 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 20 A
Collector Current-Pulse 30 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150
100
W
3
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1707
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
CE
V
BE
V
BE
h
h
h
(sat)-1
(sat)-2
(sat)-1
(sat)-2
I
CBO
I
EBO
FE-1
FE-2
FE-3
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A B 0.5 V
Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 1.5 V
Base -Emitter Saturation Voltage IC= 8A; IB= 0.4A B 1.5 V
Base -Emitter Saturation Voltage IC= 20A; IB= 2A 2.5 V
Collector Cutoff Current VCB= 100V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 50
DC Current Gain IC= 0.1A; VCE= 2V 45
DC Current Gain IC= 3A; VCE= 2V 60 260
DC Current Gain IC= 10A; VCE= 2V 30
μA
μA
f
T
Switching Times
t
on
t
stg
t
f
h
FE-2
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 20 MHz
Turn-on Time 0.5
Storage Time 2.0
Fall Time
Classifications
R Q P
60-120 90-180 130-260
IC= 8A, IB1= -IB2= 0.8A
0.2
μs
μs
μs
isc Website：www.iscsemi.cn
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