Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1692
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: V
CEO(SUS)
·DC Current Gain—
: h
FE
·Complement to Type 2SB1149
APPLICATIONS
·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(min.)
= 2000(Min.) @ IC= 1.5 A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
Collector-Base Voltage 150 V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
i
T
stg
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 8 V
Collector Current-Continuous ±3 A
Collector Current-Peak ±5 A
Collector Power Dissipation
=25℃
T
a
Collector Power Dissipation
=25℃
T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
1.3
15
W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1692
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CEO
h
FE-1
h
FE-2
Switching Times
t
on
t
stg
Collector-Emitter Sustaining Voltage IC= 3A; IB= 3mA, L= 1.0mH B 100 V
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V
Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V
Collector Cutoff Current VCB= 100V; IE= 0 10
Collector Cutoff Current
DC Current Gain IC= 1.5 A; VCE= 2V 2000 20000
DC Current Gain IC= 3 A; VCE= 2V 1000
Turn-on Time 0.5 μs
Storage Time 2.0 μs
V
= 100V; RBE= ∞
CE
I
= 1.5A, IB1= -IB2= 1.5mA;
C
RL= 27Ω; VCC≈ 40V
μA
1.0 mA
t
f
Fall Time
h
Classifications
FE-1
M L K
2000-5000 4000-12000 8000-20000
isc Website：www.iscsemi.cn
1.0 μs
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