Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1680
DESCRIPTION
·With TO-3PFa package
·High speed switching
·High V
CBO
·Large collector power dissipation
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current (Pulse) 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 330 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 6 V
℃)
Ta=25℃
TC=25℃
3
W
70
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1680
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE
tf Fall time
Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V
Collector-base breakdown voltage IC=1mA; IE=0 330 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V
Base-emitter saturation voltage IC=5A; IB=0.5A 1.2 V
Collector cut-off current
=330V; VBE=0
CE
Ta=100℃
1
15
mA
V
Emitter cut-off current VEB=6V; IC=0 1 mA
DC current gain IC=5A ; VCE=4V 15
I
=5A
C
IB1=0.8A,VEB=-5V,RB=0.5Ω
0.75 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1680
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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