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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1677
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·High reliability
·Fast speed
APPLICATIONS
·For TV horizontal output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
Ta=25℃ 2.5
W
TC=25℃ 100
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1677
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.5A ; VCE=5V 8
Collector-emitter sustaining voltage IC=100mA; IB=0 800 V
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter saturation voltage IC=4.5A ;IB=2A 5.0 V
Base-emitter saturation voltage IC=4.5A ;IB=2A 1.5 V
Collector cut-off current VCB=800V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1677
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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