Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1670
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A
·Low Collector Saturation Voltage: V
APPLICATIONS
·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 100V(Min)
(BR)CEO
= 1.5V(Max)@ IC= 10A
CE(sat)
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 8 V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous 1 A
Collector Power Dissipation
@Ta=25℃
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
Storage Temperature -55~150
±10
±20
3.5
65
A
A
W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1670
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching Times
t
on
t
stg
t
f
h
Classifications
FE-1
Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V
Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V
Collector Cutoff Current VCB= 100V ; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA
DC Current Gain IC= 10A; VCE= 2V 1000 30000
Turn-on Time 1.0 μs
Storage Time 5.0 μs
Fall Time
VCC≈ 50V, RL= 5Ω,
= 10A; IB1= -IB2= 25mA,
I
C
2.0 μs
M L K J
1000-3000 2000-5000 4000-10000 8000-30000
isc Website：www.iscsemi.cn
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