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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1666
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1133
·High reliability
·Wide area of safe operation
APPLICATIONS
·For low-frequency and general-purpose
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 8 A
PC Collector dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 6 V
Ta=25℃ 2
W
=25℃ 25
T
C
Tj Junction temperature 150 ℃
T
Storage temperature -40~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1666
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 60 pF
Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 60 V
Collector-base breakdown voltage IC=1mA ;IE=0 60 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 0.6 1.0 V
Collector cut-off current VCB=40V; IE=0 100 μA
Emitter cut-off current VEB=4V; IC=0 100 μA
DC current gain IC=0.5A ; VCE=5V 70 280
DC current gain IC=3A ; VCE=5V 20
fT Transition frequency IC=0.5A ; VCE=5V 8 MHz
h
Classifications
FE-1
Q R S
70-140 100-200 140-280
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1666
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1666
4
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