Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1663
DESCRIPTION
·High Collector-Base Breakdown Voltage : V
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min.)
(BR)CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
P
CBO
CES
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 1500 V
Collector- Emitter Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 7.7 V
Collector Current-Continuous 5 A
B Base Current-Continuous 3 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
80 W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1663
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
EBO
I
CBO
h
FE
Switching times
t
on
t
stg
Collector-Emitter Sustaining Voltage IC= 0.5A; L= 50mH 700 V
Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 2.0 V
Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V
Emitter Cutoff Current VEB= 7.7V; IC= 0 100
Collector Cutoff Current
DC Current Gain IC= 1A; VCE= 5V 18 50
Turn-On Time 1.0
Storage Time 3.0
VCB= 750V; IE= 0
= 1500V; IE= 0
V
CB
= 2.5A, IB1= 0.5A, IB2= -1A
I
C
50
1.0
μA
μA
mA
μs
μs
t
f
Fall Time
0.5
h
Classifications
FE
Q P
18-34 18-50
isc Website：www.iscsemi.cn
2
μs
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