Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1649
DESCRIPTION ·
·With TO-3PML package
·Built-in damper diode
·High voltage ,high speed
APPLICATIONS
·For color TV horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2.5 A
ICM Collector current-peak 10 A
PC Collector power dissipation 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1649
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=0.5A ; VCE=10V 3 MHz
Emitter-base breakdown voltage IE=200mA , IC=0 7 V
I
Collector-emitter breakdown voltage
Collector-base breakdown voltage IC=5mA; IE=0 1500 V
Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V
Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V
Collector cut-off current VCB=800V; IE=0 10
Emitter cut-off current VEB=4V; IC=0 40 130 mA
DC current gain IC=0.5A ; VCE=5V 8
=0.1A; RBE=∞
C
800 V
μA
VF
tf
Diode forward voltage I
Fall time
2
=2.5A 2.0 V
F
=2A;IB1=0.6A;IB2=-1.2A
I
C
=200V;RL=100Ω
V
CC
0.4
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1649
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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