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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1646
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High DC Current Gain
: h
= 1000(Min) @IC= 1A
FE
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 2 A
Collector Current-Peak 3 A
Collector Power Dissipation
@ T
=25℃
a
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
1.5
W
25
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1646
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
(BR)CEO
(BR)CBO
V
CE(
I
CBO
I
EBO
h
FE
C
OB
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 100 V
Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA B 1.5 V
)
sat
Collector Cutoff Current VCB= 100V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 3 mA
DC Current Gain IC= 1A; VCE= 2V 1000 10000
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 25 pF
isc Website：www.iscsemi.cn
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