Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1638
DESCRIPTION ·
·With TO-126 package
·DARLINGTON
APPLICATIONS
·For low frequency and power
amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 2 A
PD Total power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
10 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1638
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CEO
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=2V 1000 10000
COB Collector output capacitance f=0.1MHz ; VCB=10V 25 pF
Collector-emitter breakdown voltage IC=25mA; IB=0 100 V
Collector-emitter saturation voltage IC=1.0A ;IB=1mA 1.5 V
Base-emitter saturation voltage IC=1.0A ;IB=1mA 2.0 V
Collector cut-off current VCE=100V; IB=0 0.5 mA
Collector cut-off current VCB=100V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 3 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1638
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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