Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1633
DESCRIPTION ·
·With TO-220Fa package
·DARLINGTON
·High speed switching
·Good linearity of h
FE
APPLICATIONS
·Power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current-Peak 8 A
IB Base current (DC) 0.5 A
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
Ta=25℃
PC Collector power dissipation
TC=25℃
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
2
W
30
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1633
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
hFE DC current gain IC=3A ; VCE=3V 1500 10000
Switching times
ton
ts
Collector-emitter sustaining voltage IC=0.2A , IB=0 100 V
Collector-emitter saturation voltage IC=3A; IB=3mA 1.5 V
Base-emitter saturation voltage IC=3A; IB=3mA 2.0 V
Collector cut-off current VCB=100V;IE=0 100
Collector cut-off current VCE=100V; IB=0 100
Emitter cut-off current VEB=7V; IC=0 5 mA
Turn-on time 3.0
I
=3A ;IB1=3mA
Storage time 5.0
C
=-3mA; VCC=50V
I
B2
μA
μA
μs
μs
tf
Fall time
hFE Classifications
Q P
1500-6000 5000-10000
2
3.0
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1633
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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