Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1603
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain
: h
FE
·Complement to Type 2SB1103
APPLICATIONS
·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(T
= 60V(Min)
(BR)CEO
= 1000(Min) @IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 8 A
Collector Current-Peak 12 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
40 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1603
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 25mA; RBE= ∞
C
60 V
V
(BR)EBO
V
CE(
V
CE(
V
BE(
V
BE(
I
I
V
CBO
CEO
h
ECF
sat
sat
sat
sat
FE
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA B 1.5 V
)-1
Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA B 3.0 V
)-2
Base-Emitter Saturation Voltage IC= 4A; IB= 8mA B 2.0 V
)-1
Base-Emitter Saturation Voltage IC= 8A; IB= 80mA B 3.5 V
)-2
Collector Cutoff Current VCB= 60V; IE= 0 100
Collector Cutoff Current
DC Current Gain IC= 4A; VCE= 3V 1000 20000
C-E Diode Forward Voltage IF= 8A 3.0 V
Switching times
V
= 50V; RBE= ∞
CE
μA
10
μA
t
on
t
stg
t
f
Turn-on Time 0.5
Storage Time 5.0
IC= 4A, IB1= -IB2= 8mA
Fall Time
isc Website：www.iscsemi.cn
2
1.0
μs
μs
μs
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