Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1594
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplifier
·High speed switching industrial use
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current-Peak 15 A
IB Base current (DC) 3.5 A
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
PC Collector power dissipation
T
=25℃
C
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
1.5
W
40
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1594
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
Switching times
ton
ts
Collector-emitter sustaining voltage IC=5A , IB1=0.5A,L=1mH 60 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V
Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V
Collector cut-off current VCB=100V ;IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=0.5A ; VCE=5V 40
DC current gain IC=3A ; VCE=5V 40 240
DC current gain IC=5A ; VCE=5V 20
Turn-on time 0.5 μs
=5A ;IB1=0.5A
I
C
I
Storage time 0.5 μs
=-0.5A; VCC=50V
B2
RL=10Ω
tf
h
Fall time
Classifications
FE-2
R O Y
40-80 70-140 120-240
2
1.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1594
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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