Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1591
DESCRIPTION ·
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1100
APPLICATIONS
·Low frequency power amplification
·Low speed power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
ICM Collector current-Peak 15 A
IB Base current (DC) 0.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
Ta=25℃ 2
W
TC=25℃ 30
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1591
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
hFE DC current gain IC=10A ; VCE=2V 1000 30000
Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V
Collector-emitter saturation voltage IC=10A; IB=25mA 1.5 V
Base-emitter saturation voltage IC=10A; IB=25mA 2.0 V
Collector cut-off current VCB=100V; IE=0 10
Collector cut-off current VCE=100V; IE=0 500
Emitter cut-off current VEB=7V ;IC=0 5 mA
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1591
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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