Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1588
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SB1097
·Low speed switching
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current-Peak 15 A
IB Base current 3.5 A
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃
PC Collector power dissipation
=25℃
T
a
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
30
W
2
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1588
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
V
I
I
h
h
h
CEsat
BEsat
CBO
EBO
FE-1
FE-2
FE-1
Collector-emitter breakdown voltage IC=50mA , IB=0 60 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 0.5 V
Base-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V
Collector cut-off current VCB=80V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=3A ; VCE=1V 40 200
DC current gain IC=5A ; VCE=1V 20
Classifications
M L K
40-80 60-120 100-200
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1588
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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